Ultra-Low-Temperature Transfer-Free Growth and On-Chip Integration of Two-Dimensional Materials

Driven by the application requirements of silicon-based electronic and optoelectronic chips,
this research addresses the key bottlenecks associated with thermal budget constraints and integration strategies
between two-dimensional materials and conventional semiconductor processes.
We develop ultra-low-temperature, transfer-free growth techniques and on-chip heterogeneous integration approaches
to enable the direct incorporation of two-dimensional materials into existing semiconductor platforms.

1. Ultra-Low-Temperature / Room-Temperature CVD Growth Techniques

• Achieving wafer-scale growth of high-quality single-crystal two-dimensional materials
  under ultra-low-temperature or room-temperature conditions
• Developing ultra-low-temperature / room-temperature CVD growth processes
  compatible with back-end-of-line (BEOL) integrated circuit technologies

2. Transfer-Free Direct Growth and Integration on Arbitrary Substrates

• Realizing transfer-free, in situ growth of two-dimensional materials
  on silicon-based and other functional substrates
• Establishing on-chip heterogeneous integration schemes
  between two-dimensional materials and silicon-based CMOS platforms