High-Quality and Wafer-Scale Controlled Synthesis of Two-Dimensional Materials This research focuses on the crystalline quality, single-crystal size scaling, and interfacial engineering of emerging two-dimensional materials, aiming to establish scalable and controllable synthesis frameworks for high-quality wafer-scale two-dimensional material systems. 1. Crystal Quality and Defect Engineering Precise control of defect density and crystalline quality in two-dimensional materials Elucidating the effects of defects on electronic and optical properties 2. Large-Area Wafer-Scale Single-Crystal Growth Investigating the role of epitaxial substrates in controlling crystallographic phase and orientation uniformity of two-dimensional materials Achieving controllable synthesis of large-area, wafer-scale single-crystal two-dimensional films 3. Surface and Interface Interactions and Layer-Stacking Control Exploring surface and interfacial interactions between two-dimensional materials and substrates, as well as interlayer coupling mechanisms Enabling precise control of layer thickness and stacking configurations in van der Waals two-dimensional material systems

Ultra-Low-Temperature Transfer-Free Growth and On-Chip Integration of Two-Dimensional Materials Driven by the application requirements of silicon-based electronic and optoelectronic chips, this research addresses the key bottlenecks associated with thermal budget constraints and integration strategies between two-dimensional materials and conventional semiconductor processes. We develop ultra-low-temperature, transfer-free growth techniques and on-chip heterogeneous integration approaches to enable the direct incorporation of two-dimensional materials into existing semiconductor platforms. 1. Ultra-Low-Temperature / Room-Temperature CVD Growth Techniques Achieving wafer-scale growth of high-quality single-crystal two-dimensional materials under ultra-low-temperature or room-temperature conditions Developing ultra-low-temperature / room-temperature CVD growth processes compatible with back-end-of-line (BEOL) integrated circuit technologies 2. Transfer-Free Direct Growth and Integration on Arbitrary Substrates Realizing transfer-free, in situ growth of two-dimensional materials on silicon-based and other functional substrates Establishing on-chip heterogeneous integration schemes between two-dimensional materials and silicon-based CMOS platforms

Optoelectronic Properties and Device Applications

By combining bandgap engineering and optoelectronic response characteristics of different two-dimensional (2D) materials, we construct multifunctional van der Waals heterostructure systems and systematically investigate their novel optoelectronic physical mechanisms. This research further explores the application potential of such heterostructures in high-performance optoelectronic devices and quantum information devices. 1. Optoelectronic Properties and Fundamental Mechanisms Carrier generation, transfer, and recombination dynamics in two-dimensional van der Waals heterostructures Effects of interlayer coupling and interface states on optoelectronic response and energy conversion efficiency 2. Photodetectors and Imaging Devices Development of high-sensitivity two-dimensional material-based photodetectors with broadband spectral coverage (visible–infrared–ultraviolet) Construction of highly integrated on-chip multiband imaging chips based on two-dimensional materials, enabling co-integration with silicon-based platforms 3. Quantum Light Sources and Single-Photon Devices Investigation of defect formation mechanisms in two-dimensional materials and their single-photon emission properties Realization of deep-ultraviolet single-photon source devices based on hexagonal boron nitride (h-BN) and exploration of their on-chip integration Advancement of on-chip integration and application of two-dimensional quantum light sources